Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC 2 by strain-engineering: electronic structure and chemical bonding analysis

Citation:
Xu Y, Ning Z, Zhang H, Ni G, Shao H, Peng B, Zhang X, He X, Zhu Y, Zhu H. "Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC 2 by strain-engineering: electronic structure and chemical bonding analysis." RSC advances. 2017;7:45705-45713.

Abstract:

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