The anisotropic ultrahigh hole mobility in strain-engineering two-dimensional penta-SiC $ \_2$

Citation:
Xu Y, Ning Z, Zhang H, Ni G, Shao H, Peng B, Zhang X, He X, Zhu Y, Zhu H. "The anisotropic ultrahigh hole mobility in strain-engineering two-dimensional penta-SiC $ \_2$." arXiv preprint arXiv:1701.03715. 2017.

Abstract:

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Notes:

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