Thermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film properties

Citation:
Muiva CM, Santhaiaraj ST, Mwabora JM. "Thermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film properties ." Journal of Optoelectronics and Advanced Material. 2011;13(9):1240-1245.

Abstract:

Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub
had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films.

Keywords: In2Se3, Spray pyrolysis, Chalcopyrite buffers, Opto-electronic property

Notes:

Received April 18,2011; accepted October 20, 2011

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