Effect of Recombination on Series Resistance in eta Solar Cell Modified with In(OH)xSy Buffer Layer

Citation:
Robinson Musembi, Aduda B, Mwabora J, Rusu M, Fostiropoulos K, Lux-Steiner M. "Effect of Recombination on Series Resistance in eta Solar Cell Modified with In(OH)xSy Buffer Layer." International Journal of Energy Engineering. 2013;3(3):183-189.

Abstract:

Transport mechanism studies in TiO2/In(OH)xSy/Pb(OH)xSy/PEDOT:PSS eta solar cell have been carried out. The characterizations have been performed both in the dark and under varying illumination intensity for temperature range 200 K – 320 K. Calculations from ideality factor have shown that the recombination process of the eta solar cell in the dark to be tunneling enhanced, while under illumination it is thermally activated and takes place through exponentially distributed energy recombination levels. The temperature has been found to influence series resistance of the solar cell. Series resistance has been found to be high at low temperature and low at higher temperature, thus we can conclude that the recombination is thermally activated.

Keywords: Eta Solar Cell, Recombination, Series Resistance, Buffer Layer

Cite this paper: Robinson Musembi, Bernard Aduda, Julius Mwabora, Marin Rusu, Konstantinos Fostiropoulos, Martha Lux-Steiner, Effect of Recombination on Series Resistance in eta Solar Cell Modified with In(OH)xSy Buffer Layer, International Journal of Energy Engineering, Vol. 3 No. 3, 2013, pp. 183-189. doi: 10.5923/j.ijee.20130303.09.

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