Light soaking characterization on complete SnO2:F/TiO2/ln(OH)xSy/PEDOT:PSS/Au, Pb(OH)xS)pEDOT:PSS/Au, eta solar cell structure
as well as on devices which do not include one or both TiO2 and/or PEDOT:PSS layers has been conducted. Additionally,
studies of SnO2:F/In(OH)xSy/PEDOT:PSS/Au solar cell have been performed. The power conversion
efficiency and the short circuit current density have been found to increase with light soaking duration by a factor of
about 1.6 - 2.7 and 2.1 - 3, respectively. The increase in these two parameters has been attributed to the filling up of trap
states and/or charge-discharge of deep levels found in In(OH)xSy. These effects take place at almost fill factor and open
circuit voltage being unaffected by the light soaking effects.